TKM3F1200 GE
The TKM3F1200 GE is a high-performance IGBT(insulated gate bipolar transistor)module designed for high power density applications.It combines advanced IGBT chip technology and optimized package design to provide outstanding electrical performance,thermal performance and reliability. Product parameter Collector-emitter voltage:1200V Collector current:The current range may vary depending on the specific model and cooling conditions,but usually has a higher…










