Based on the available information, the AMAT 0010-28715 is a 300mm HTR MCA SST Heater Purge Ring, also described as a 300mm Electrostatic Chuck (ESC) Heater with Purge Functionality. The “SST” likely refers to Stainless Steel construction. This component is used in Applied Materials (AMAT) semiconductor manufacturing equipment for controlling the temperature of the electrostatic chuck (ESC) that holds 300mm wafers during processing and also provides a purge gas flow.
Detailed Parameter Table
| Parameter name | Parameter value |
|---|---|
| Product model | 0010-28715 |
| Manufacturer | Applied Materials (AMAT) |
| Product category | 300mm MCA SST ESC Heater Purge Ring |
| Application | Semiconductor Manufacturing Equipment (Wafer Processing) |
| Wafer Size Compatibility | 300mm |
| Specific Designation | 300mm HTR MCA SST Heater Purge Ring |
| Function | Heats and regulates the temperature of the electrostatic chuck (ESC) and provides a purge gas flow during wafer processing |
| Material | Stainless Steel (SST) |
| Heating Element | To be determined (likely ceramic or similar high-temperature material) |
| Temperature Range | To be determined (suitable for typical wafer processing temperatures) |
| Mounting Type | Ring-shaped, specific to AMAT ESC design |
| Compatibility | Applied Materials 300mm wafer processing systems (e.g., Endura) |
Product Introduction
The AMAT 0010-28715 is a high-performance 300mm HTR MCA SST Heater Purge Ring designed by Applied Materials (AMAT) for precise thermal management and backside environment control of electrostatic chucks (ESCs) in semiconductor manufacturing equipment processing 300mm silicon wafers. This AMAT 0010-28715 integrates the crucial functions of heating the ESC to maintain the desired wafer temperature and delivering a purge gas to the backside of the wafer. Accurate temperature control and backside purging are essential for achieving consistent wafer quality and process uniformity during various critical steps in semiconductor fabrication, such as deposition, etching, and lithography. As a vital component in the wafer handling and processing system, the AMAT 0010-28715 contributes significantly to the overall efficiency and yield of advanced semiconductor manufacturing by ensuring the precise thermal and backside pressure environment required for optimal process outcomes. The Stainless Steel (SST) construction ensures durability and compatibility with the process environment.
Core Advantages and Technical Highlights
The AMAT 0010-28715 300mm HTR MCA SST Heater Purge Ring offers several key advantages for precise wafer temperature control and backside environment management:
Precise and Uniform Heating: The integrated ring-shaped heater ensures accurate and consistent temperature distribution across the electrostatic chuck, leading to uniform wafer temperature, which is critical for consistent processing results.
Backside Purge Capability: The integrated purge ring design allows for controlled delivery of gas to the backside of the 300mm wafer. This can be used for various purposes, such as optimizing heat transfer between the chuck and the wafer or managing process byproducts at the wafer-chuck interface.
Stainless Steel Construction: The use of Stainless Steel (SST) provides excellent durability and chemical compatibility with the demanding environments within semiconductor processing chambers.
Optimized for 300mm Wafers: Specifically designed for 300mm silicon wafers, this assembly meets the requirements of modern, large-wafer semiconductor manufacturing.
Seamless AMAT System Integration: As a genuine AMAT part, the 0010-28715 ensures seamless integration and compatibility with Applied Materials’ 300mm wafer processing equipment, guaranteeing optimal performance and reliability of the ESC temperature and purge control systems.
Contributes to Wafer Quality: Precise temperature control and backside environment management provided by the 0010-28715 are crucial for achieving the desired film properties, etch rates, and other process characteristics that directly impact the quality of the semiconductor devices produced.
