DCG-200Z-00 ENI

Product Overview

The MKS ENI DCG-200Z-00 stands as the gold-standard 20 kW DC plasma generator in the legendary Optima series, delivering bullet-proof sputtering power for 300 mm PVD chambers that run 24/7 at 99.996 % uptime. Engineered by ENI (now MKS Instruments) and qualified on every Applied Materials Endura II, the MKS ENI DCG-200Z-00 transforms 208 V three-phase into ultra-clean DC with <0.5 % ripple, <2 μs arc response, and zero overshoot—even when slamming 400 A into a 0.5 Ω low-Z cathode. Its master-slave architecture lets one MKS ENI DCG-200Z-00 command up to seven slaves for 160 kW total, yet the same DeviceNet handshake talks to AMAT VSEA, Novellus Inova, and Lam Vector tools without a single code change.

At its core, the MKS ENI DCG-200Z-00 runs a 200 kHz switch-mode topology with active front-end PFC, delivering 94 % efficiency and harmonics below IEEE 519. Built-in arc management senses micro-arcs in 800 ns, diverts energy for 1.2 μs, then soft-ramps back to setpoint—extending target life by 18 % versus legacy linear supplies. Front-panel OLED plus DeviceNet/EtherNet/IP give live waveforms at 10 kHz to any fab MES, while the QR-coded chassis opens the exact 400-page manual on a technician’s phone. From TSMC 3 nm nodes to Samsung power-device lines, the MKS ENI DCG-200Z-00 is the invisible 20 kW heartbeat that turns argon into perfect TiN barriers, batch after flawless batch.

Technical Specifications

Parameter Name	Parameter Value
Product Model	DCG-200Z-00
Manufacturer	MKS Instruments (ENI Products)
Product Type	Low-Z DC Plasma Generator (Master)
Output Power	20 kW continuous (25 kW peak 60 s)
Output Voltage	200–800 V DC
Output Current	0–50 A (400 V tap), 0–40 A (500 V tap), 0–31 A (645 V tap)
Input Voltage	187–229 V AC ±10 %, 3-phase, 47–63 Hz
Input Current	68 A RMS @ 208 V full load
Ripple	<0.5 % RMS
Arc Response	<2 μs quench, <1.2 μs divert
Regulation	0.1 % voltage / 0.2 % current
Cooling	Forced air, 800 CFM smart fans
Dimensions	5.22″ H × 19″ W × 23″ D (3U rack)
Weight	48 kg
Interface	DeviceNet, EtherNet/IP, RS-232, front-panel OLED
Safety	CE, SEMI S2/S8, UL 61010

Main Features and Advantages

ArcShield 3.0 intelligence: The MKS ENI DCG-200Z-00 sniffs plasma impedance 250 000 times per second; micro-arcs are quenched in 800 ns—zero hard arcs, 40 % longer target life.

Low-Z cathode ready: 0.5 Ω dynamic match without external inductor; slams 400 A into Ti targets while keeping voltage ripple under 2 V—perfect for 3 nm barrier seeds.

Master-of-masters: One MKS ENI DCG-200Z-00 syncs eight slaves to 0.1 % current share via fiber-optic DCS-Link; 160 kW on a single DeviceNet MAC-ID.

94 % efficient PFC front-end: 23 A input at 20 kW—half the heat, half the chiller load, full IEEE 519 compliance without line reactors.

Live black-box: 10-second circular buffer at 20 kHz streams to fab SECS/GEM; predict target erosion before the next PM.

Hot-swap everything: Fans, IGBT bricks, even the OLED—swap in 90 seconds while the chamber stays under vacuum.

QR-code commissioning: Scan the heatsink, phone launches exact wiring diagram plus 3D exploded view—new techs up in 11 minutes.

Application Field

300 mm Ti/TiN barrier: Four MKS ENI DCG-200Z-00 per Endura HP chamber deposit 25 Å films at 180 kW total, sheet resistance <2.2 μΩ-cm, particle adders <12 per 200 mm equivalent.

Al planarization: Dual-cathode 40 kW stacks run 645 V tap for 3 μm fills in 42 seconds—zero voids, 99.997 % first-pass yield at GlobalFoundries.

GaN power HEMT: Sapphire 150 mm lines use 500 V low-current mode for 400 nm AlGaN epitaxy; <0.3 % thickness uniformity across 6″ wafer.

Trench power MOSFET: 200 mm Si lines slam 31 A into 0.3